常用芯片资料——HRB0502A

HRB0502ASilicon SchottkyBarrier Diodefor RectifyingHITACHIADE-208-609ZRev0Mar.1998Features•Low forwardvoltage dropand suitablefor highefficincy rectifying.•CMPAK Packageis suitablefor highdensity surfacemounting andhigh speedassembly.Ordering InformationTypeNo.Laser MarkPackage CodeHRB0502A E3CMPAKOutline1NC2Anode3CathodeHitaclit ZsemiconductorAbsoluteMaximum RatingsTa=25℃Item SymbolValue UnitRepetitive peak reverse20VVRRMvoltageAverage rectifiedcurrent500mAIo41Non-RepetitivepeakforwardIFSM*25Asurge currentJunctiontemperature Tj125℃Storage temperatureTstg-55to+125℃Notes

1.See fromFig.4to Fig.6Notes

2.10msec sinewave1pulseElectrical CharacteristicsTa=25℃Item SymbolMin TypMax UnitTest ConditionForwardvoltage

0.4V500mAVF——IF=Reverse currentIR——200pA VR=20VcCapacitance—120—pF V=0V,f=1MHzRThermal resistanceRthj-a—450—℃/W Polyimideboard1Notes

1.Polyimide boardMainCharacteristicForward voltage V pV Reverse voltageVVRFig.1Forward current Vs.Forward voltageFig.2Reverse currentVs.Reverse voltageN-caunOS」PBMJOL0510152025Fig.3Capacitance Vs.Reverse voltageont

①c-LLedeosus

①0d.LLa1111-O-O-O-O5-4-T

①Main CharacteristicMPD=5/6duo1eD=2Z-dss-p D=1/2」8M0dP」BM6」OL10152025Reverse voltagegg VRpy/orward powerdissipation Vs.Forward currentFig

5.Reverse powerdissipation Vs.Reversevoltage七JtA10IItpI6」Fig.6Average rectifiedcurrentVs.Ambient temperature--nbocMO2P

①lao4

①o2o

5.oPackage Dimensions

2.0士

0.2LOCMn q+

0.1VLaser MarkUP—

0.05O3_6+iE3g0-

0.11NCCN2Anode山3Cathode2nanq+

0.1u-0-

0.

05.

0.65]

0.+

6511.3±

0.2*UP-

0.05Hitachi CodeCMPAKJEDEC Code—EIAJ CodeSC-70Weight g

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